Substrate for semiconductor device

Abstract

PURPOSE:To obtain high heat dissipating property, to make it possible to implement a low cost and a thin configuration, and to obtain excellent electric insulation, by constituting a base material by a molybdenum plate, materials comprising films of copper or copper alloy, which are provided on the upper and lower surface of the molybdenum plates, and an electric insulating ceramic thin film formed on one surface of the base material. CONSTITUTION:The base material of a substrate is formed by laminating copper or copper-alloy films 2 and 3 having high heat conductivity on the upper and lower surfaces of a molybdenum plate 1 having a small thermal expansion coefficient. As a forming method, a cladding method such as cold welding, hot welding, explosion molding and the like is suitable. An electric insulating ceramic thin film 4 is formed on one surface of said base material, e.g., on the surface of the copper or copper-alloy film 2. Thus a substrate is formed. As the electric insulating ceramic thin film 4, there are the following materials : oxides such as, e.g., Al2O3, Y2O3, ZrO2, TiO2 and the like and composite oxides, in which said oxides are the main components; nitrides of Si3N4, AlN and the like and composite nitrides, in which said nitrides are the main components; diamond-or pseudo-diamond-state carbon or the mixed material of the carbon; and the like.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (11)

    Publication numberPublication dateAssigneeTitle
    DE-10393851-B4November 29, 2007Kabushiki Kaisha Toyota Chuo KenkyushoHalbleiterelement-Wärmeableitungselement sowie Halbleitervorrichtung, in der dieses eingesetzt wird und Verfahren zu dessen Herstellung
    JP-2006179791-AJuly 06, 2006Toshiba Corp, 株式会社東芝Semiconductor device
    JP-2008028295-AFebruary 07, 2008Toyota Central Res & Dev Lab Inc, Toyota Motor Corp, トヨタ自動車株式会社, 株式会社豊田中央研究所Power semiconductor module and production method therefor
    JP-2008140877-AJune 19, 2008Tecnisco Ltd, 株式会社テクニスコComposite material heatsink and its manufacturing method
    JP-2008210847-ASeptember 11, 2008Jtekt Corp, 株式会社ジェイテクトCircuit structure
    JP-4664670-B2April 06, 2011株式会社東芝半導体装置
    JP-H04287952-AOctober 13, 1992Mitsubishi Electric CorpComposite insulating board and semiconductor device using same
    US-5077595-ADecember 31, 1991Mitsubishi Denki Kabushiki KaishaSemiconductor device
    US-5296735-AMarch 22, 1994Mitsubishi Denki Kabushiki KaishaPower semiconductor module with multiple shielding layers
    US-7396735-B2July 08, 2008Kabushiki Kaisha Toyota Chuo KenkyusyoSemiconductor element heat dissipating member, semiconductor device using same, and method for manufacturing same
    WO-2004053984-A1June 24, 2004Kabushiki Kaisha Toyota Chuo Kenkyusho半導体素子放熱部材およびそれを用いた半導体装置ならびにその製造方法